Skip to main content
SpringerLink
Log in

Investigation of Passivation Effects in InP HEMT Layers

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

We have investigated the influence of the deposition of a passivating silicon nitride layer on the electron transport in InAlAs/InGaAs/InAlAs quantum wells capped with a thin InGaAs layer. This structure is grown by Molecure Beam Epitaxy lattice-matched on InP substrates for the fabrication of High Electron Mobility Transistors. The InGaAs cap layer is added to reduce the ohmic contact resistance. In a first step to illuminate the complicated structural changes involved when passivating fully processed devices, we studied the influence of silicon nitride layer deposition on the virgin epilayers. The electrical transport properties were characterised by resistance, mobility, carrier concentration and magnetoresistance measurements, while Raman spectroscopy was used to probe the vibrational properties which are influenced by the free carriers. Because of the small penetration depth of the laser light mainly the lattice vibrations in the InGaAs ohmic contact layer were observed in the Raman spectra. Before passivation this thin highly doped cap layer is depleted, as confirmed by magnetoresistance measurements, that show a single conducting path in the two-dimensional electron gas formed in the InAlAs/InGaAs/InAlAs QW, and only bulk-like InGaAs phonons are observed in the cap layer. After passivation a shift to lower frequencies of the GaAs-like mode indicates a high electron concentration in the InGaAs cap. The results of the Raman analysis are in good agreement with the electrical transport data that show a considerably lower resistance after passivation. Magnetoresistance measurements on passivated layers confirmed the creation of an additional conducting path in the InGaAs cap layer introduced by the silicon nitride deposition process.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. L. D. Nguyen, A. S. Brown, M. A. Thompson, L. M. Jelloian, IEEE Trans. Electron Devices ED-39, 2007 (1992).

    Article  Google Scholar 

  2. L. D. Nguyen, L. E. Larson, U. K. Mishra, Proc. of the IEEE 80, 494 (1992).

    Article  Google Scholar 

  3. Y. Baeyens, M. Van Hove, W. De Raedt, D. Schreurs, B. Nauwelaers, M. Van Rossum, in Proc. of ESSDERC '94. edited by C. Hill and P. Ashburn (Editions Frontières, Gif-sur-Yvette, France, 1992), p. 803–807.

  4. M. Van Hove, J. Finders, K. van der Zanden, W. De Raedt, M. Van Rossum, Y. Baeyens, D. Schreurs, B. Nauwelaers, A. Zeng, M. K. Jackson, in Proc. of SOTAPOCS XXIII, edited by F. Ren, S. J. Pearton, G. C. Chi, D. N. Buckley, P. Van Daele, T. Kamijoh and F. Schuermeyer (Electrochem. Soc. Proc. 95–21, Pennington, NJ, 1995), p. 395–407.

  5. K. J. Chen, K. Maezawa, K. Arai, M. Yamamoto, T. Enoki, Electronics Lett. 31, 925 (1995).

    Article  Google Scholar 

  6. H. Hasegawa, H. Ohno, J. Vac. Sci. Technol. B4, 1130 (1986).

    Article  Google Scholar 

  7. D. A. Syphers, K. P. Martin, R. J. Higgins, Appl. Phys. Lett. 49, 534 (1986).

    Article  Google Scholar 

  8. M. van der Burgt, V. C. Karavolas, F. M. Peeters, J. Singleton, R. J. Nicholas, F. Herlach, J. J. Harris, M. Van Hove, G. Borghs, Phys. Rev. B, in print.

  9. T. P. Pearsall, R. Charles, J. C. Portal, Appl. Phys. Lett. 42, 436 (1983).

    Article  CAS  Google Scholar 

  10. D. J. Mowbray, W. Hayes, L. L. Taylor, S. J. Bass, Semicond. Sci. Technol. 5, 83 (1990).

    Article  CAS  Google Scholar 

  11. H. Hasegawa, M. Akazawa, K. Matsuzaki, H. Ishii, H. Ohno, Jpn. J. Appl. Phys. 27, L2265 (1988).

    Article  CAS  Google Scholar 

  12. D. H. Lee, S.S. Li, N. J. Sauer, T.Y. Chang, Appl. Phys. Lett. 54, 1863 (1989).

    Article  CAS  Google Scholar 

  13. R. A. Bartynski, L. Geelhaar, F. Ren, D. N. Buckley, in Proc. of SOTAPOCS XXIII, edited by F. Ren, S. J. Pearton, G. C. Chi, D. N. Buckley, P. Van Daele, T. Kamijoh and F. Schuermeyer (Electrochem. Soc. Proc. 95–21, Pennington, NJ, 1995), p. 337–345.

  14. A. J. Nelson, S. P. Frigo, R. A. Rosenberg, in Surface Chemical Cleaning and Passivation for Semiconductor Processing, edited by G. S. Higasi, E. A. Irene, and T. Ohmi (Mat. Res. Soc. Proc. 315, Pittsburgh, PA, 1993), pp. 181–187.

  15. S. C. Shei, Y. K. Su, C. J. Hwang, M. Yokohama, Jpn. J. Appl. Phys. 34, 476 (1995).

    Article  CAS  Google Scholar 

  16. Y. H. Jeong, S. K. Jo, B. H. Lee, T. Sugano, IEEE El. Dev. Lett. 16, 109 (1995).

    Article  CAS  Google Scholar 

  17. J. S. Herman, F. L. Terry, Appl. Phys. Lett. 60, 716 (1992).

    Article  CAS  Google Scholar 

  18. S. Tiwari, S. L. Wright, J. Batey, IEEE El. Dev. Lett. 9, 488 (1988).

    Article  Google Scholar 

  19. I. Jimenez, F. J. Palomares, J. Avila, M. T. Cuberes, F. Soria, J. L. Sacedón, K. Horn, J. Vac. Sci. Technol. A11, 1028 (1993).

    Article  Google Scholar 

  20. G. G. Fountain, S. V. Hattangady, D. J. Vitkavage, R. A. Rudder, R. J. Markunas, Electronics Lett. 24, 1134 (1988).

    Article  Google Scholar 

  21. G. G. Fountain, S. V. Hattangady, R. A. Rudder, R. J. Markunas, G. Lucovsky, S. S. Kim, D. V. Tsu, J. Vac. Sci. Technol. A7, 576 (1989).

    Article  Google Scholar 

  22. S. C. Shei, Y. K. Su, C. J. Hwang, M. Yokoyama, Jpn. J. Appl. Phys. 34, 476 (1995).

    Article  CAS  Google Scholar 

Download references

Acknowledgments

JF acknowledges his contract within the European Community Human Capital and Mobility (HCM) Programme. The research activities of KvdZ are financed by a specialisation scholarship of the Flemish Institute for the enhancement of the scientific-technological research in the industry (IWT). This research activity was also financially supported by the European Space Agency (ESA).

Author information

Authors and Affiliations

  1. Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, B-3001, Leuven, Belgium

    M. Van Hove, J. Finders, K. Van Der Zanden & M. Van Rossum

  2. I. Phys. Institut, Aachen University of Technology, Sommerfeldstraße 28, Aachen, D-52056, Germany

    J. Geurts

Authors
  1. M. Van Hove
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. J. Finders
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. K. Van Der Zanden
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. J. Geurts
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. Van Rossum
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to M. Van Hove.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Van Hove, M., Finders, J., Van Der Zanden, K. et al. Investigation of Passivation Effects in InP HEMT Layers. MRS Online Proceedings Library 406, 271–276 (1995). https://doi.org/10.1557/PROC-406-271

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-406-271

Search

Navigation