Abstract
The direct nucleation and growth of Ti suicide on the surfaces of Si(100) and amorphous Si were studied. Silicide phase formation depended on the temperature and the stoichiometry of deposition and the crystallinity of the substrate. A very low temperature, ~ 500°C, for the nucleation of the low-resistivity C54-TiSi2 phase was observed on amorphous Si. Stoichiometric and uniform TiSi2 layers were grown with the depositions of pure Ti. On crystalline Si, uniform TiSi2 layers were also grown at ~ 500°C with a co-deposited template layer. The much reduced C54 formation temperature is discussed in terms of a possible circumvention of precursor amorphous suicide phases during surface nucleation.
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Tung, R.T. Surface Nucleation and Template Growth of Ti Silicides. MRS Online Proceedings Library 402, 101–106 (1995). https://doi.org/10.1557/PROC-402-101
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DOI: https://doi.org/10.1557/PROC-402-101