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Divacancy Annealing in Crystalline Silicon Using E-Beam and Pulsed Ruby Laser Excitation

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Abstract

Annealing of divacancies which were produced by 11B ion implantation was investigated under furnace, pulsed e-beam and pulsed ruby laser exposures. Despite orders of magnitude shorter exposure times for annealing and the concomitant expected high levels of electronic excitation and layer stress, we find that the thermal annealing mechanism observed for furnace annealing is an adequate description for divacancy annealing under e-beam exposure. The observed need for melting to remove divacancies by Q-switched laser annealing is also consistent with predictions based upon extrapolations from furnace annealing.

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References

  1. See, for example, proceedings of previous MRS symposia on Laser Annealing, published by American Institute of Physics (1979), Academic Press (1980), and North Holland (1981).

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Authors and Affiliations

  1. Sandia National Laboratories, Albuquerque, New Mexico, USA

    H. J. Stein, J. A. Knapp & P. S. Peercy

Authors
  1. H. J. Stein
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  2. J. A. Knapp
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  3. P. S. Peercy
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Additional information

This work performed at Sandia National Laboratories supported by the U.S. Department of Energy under contract number DE–AC04–76DP00789.

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Stein, H.J., Knapp, J.A. & Peercy, P.S. Divacancy Annealing in Crystalline Silicon Using E-Beam and Pulsed Ruby Laser Excitation. MRS Online Proceedings Library 4, 319–324 (1981). https://doi.org/10.1557/PROC-4-319

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  • DOI: https://doi.org/10.1557/PROC-4-319

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