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Analysis of TPD Spectra on Semiconductor Surfaces by Monte Carlo Simulations

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This work aims to provide a systematic approach for deriving desorption mechanisms on semiconductor surfaces from a coupling of temperature programmed desorption (TPD) experiments and Monte Carlo (MC) simulations. MC simulations are used to evaluate different desorption schemes to identify mechanisms consistent with experimental results. Effects of nearest neighbor interactions, island formation, and surface reconstructions are quantified through the simulations. Methyl desorption from Ga-rich GaAs is used as a case study to illustrate the MC procedure for interpretation of TPD spectra.

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Authors and Affiliations

  1. Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    Rajesh Venkataramani & Klavs F. Jensen

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  1. Rajesh Venkataramani
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  2. Klavs F. Jensen
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Venkataramani, R., Jensen, K. Analysis of TPD Spectra on Semiconductor Surfaces by Monte Carlo Simulations. MRS Online Proceedings Library 399, 109 (1995). https://doi.org/10.1557/PROC-399-109

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  • DOI: https://doi.org/10.1557/PROC-399-109

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