Abstract
MeV ion induced damage and annealing behavior in Si are reported using 3 ion species such as B, P and Si. Si self implantations were done to reveal the intrinsic behavior of secondary defect formation by excluding the possibility of chemical interactions between substrate atoms and dopant atoms. Experimental results of B and P implantations were compared to those of Si. TEM observations showed that interstitial type secondary defects are exclusively formed at around Rp. DCXRD rocking curve analyses indicated that an isolated layer of (+) strain is built up at around Rp after strain relaxation by annealing. Sources for secondary defects were thought to be Si self interstitials. Atomistic mechanisms of secondary defect formation and the effect of ion species on them are discussed.
References
S. Odanaka, T. Yabu, N. Shimizu, H. Umimoto and T. Ohzone, IEEE, ED-37, p.1, 735 (1990)
K. Tsukamoto, S. Komori, T. Kuroi and Y. Akasaka, Nucl. Instr. and Meth., B59/60, p.584 (1991)
J. S. Williams, R. G. Elliman, M.C. Ridgway, C. Jagadish, S. L. Ellingboe, R. Goldberg, M. Petravic, W. C. Wong, Z. Dezhang, E. Nygren and B.G Svensson, Nucl. Instr. and Meth., B80/81,p. 507(1993)
H. Sayama, A. Kinomura, Y. Yuba and M. Takai, Nucl. Instr. and Meth., B80/81, p. 587 (1993)
T. Kuroi, S. Komori, H. Miyatake, K. Tsukamoto and Y. Akasaka, SSDM., p. 441 (1990)
T. Kuroi, S. Komori, K. Fukumoto, Y. Mashiko, K. Tsukamoto and Y. Akasaka, SSDM., p. 56(1991),
H. Wong, N. W. Cheung, P. K. Chu, J. Liu and J. W. Mayer, Appl. Phys. Lett., 52, p. 1,023 (1988)
M. Tamura, N. Natsuaki, Y. Wada and E. Mitani, Nucl. Instr. and Meth., B21, p. 438 (1987)
M. Tamura and T. Suzuki, Nucl. Instr. and Meth., B39, p. 318 (1989)
O. W. Holland and C. W. White, Nucl. Instr. and Meth., B59/60, p. 353 (1991)
D. K. Browen, N. Loxley, B. K. Tanner, L. Cooke and M. A. Capano, Mat. Res. Soc. Proa, 208, p. 113 (1991)
N. H. Cho, K. W. Jang, C. S. Kim, J. Y. Lee and J. S. Ro, J. of Kor. Vac. Soc., Vol.4 NO. 1 p. 109 (1995)
N. H. Cho, K. W. Jang, K. S. Suh, J. Y. Lee and J. S. Ro, in Advanced Materials and Processing, edited by K. S. Shin, J. K. Yoon and S. J. Kim (Proceedings of the Second Pacific Rim International Conference vol. 2, Kyungju, Korea. 1995), p 1,303–1,308.
A. M. Mazzone, Phys. Stat. Sol., (a) 95, p 149 (1986)
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Cho, NH., Jang, KW., Lee, JY. et al. Mev Ion Induced Damages and their Annealing Behavior in Silicon. MRS Online Proceedings Library 396, 781 (1995). https://doi.org/10.1557/PROC-396-781
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DOI: https://doi.org/10.1557/PROC-396-781