Abstract
Thin semiconducting films of hydrogenated amorphous silicon (a-Si:H) and its carbon alloy (a-Si:C:H) were applied to gas microstrip detectors in order to control gain instabilities due to charges on the substrate. Thin (∼100 nm) layers of a-Si:H or p-doped a-Si:C:H were placed either over or under the electrodes using the plasma enhanced chemical vapor deposition (PECVD) technique to provide the substrate with a suitable surface conductivity. By changing the carbon content and boron doping density, the sheet resistance of the a-Si:C:H coating could be successfully controlled in the range of 1012 ∼ 1017 μ/□, and the light sensitivity, which causes the resistivity to vary with ambient light conditions, was minimized. An avalanche gain of 5000 and energy resolution of 20% FWHM were achieved and the gain remained constant over a week of operation. A-Si:C:H film is an attractive alternative to ion-implanted or semiconducting glass due to the wide range of resistivities possible and the feasibility of making deposits over a large area at low cost.
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Hong, W.S., Cho, H.S., Perez-Mendez, V. et al. Utilization of Amorphous Silicon Carbide (a-Si:C:H) as a Resistive Layer in Gas Microstrip Detectors. MRS Online Proceedings Library 377, 523–528 (1995). https://doi.org/10.1557/PROC-377-523
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DOI: https://doi.org/10.1557/PROC-377-523