Abstract
A new method is presented which is suitable to check gettering processes and to evaluate gettering efficiencies. This method is based on an intentional contamination of the respective silicon wafer by means of palladium or any other haze forming metal. The palladium is diffused and haze is revealed by preferential etching. In order to determine gettering efficiency the sizes of the haze areas on gettered and non-gettered wafers are compared. The quantity of the gettered palladium can be deduced from lateral palladium profiles.
In contrast to procedures published in the literature this method is very simple and fast. Therefore it is suitable for routine application to check back side damaged wafers or internal gettering.
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References
A. Goetzberger, W. Shockley J.Appl.Phys. 31 1821 (1960)
A. Ourmazd, W. Schröter Appl.Phys.Lett. 45 781 (1984)
e.g. L.E. Katz, P.F. Schmidt, C.W. Pearce J.Electrochem.Soc. 128 620 (1981)
e.g. T.E. Seidel, R.L. Meek, A.G. Cullis J.Appl.Phys. 46 600 (1975)
e.g. D. Lecrosnier, J. Paugam, G. Pelais, F. Richou, M. Salvi J.Appl.Phys. 52 5090 (1981)
e.g. K. Yamamoto, S. Kishino, Y. Matsushita, T. Iizuka Appl.Phys.Lett. 36 195 (1980)
e.g. C.W. Pearce, V.J. Zaleckas J.Electrochem.Soc. 126 1436 (1979)
e.g. T.M. Buck, J.M. Poate, K.A. Pickar, C.M. Hsieh Surface Science 35 362 (1973)
e.g. T.Y. Tan, E.E. Gardner, W.K. Tice Appl.Phys.Lett. 30 175 (1977)
e.g. Y. Hajafuji, T. Yamada, Y. Aoki J.Electrochem.Soc. 128 1975 (1981)
e.g. F. Shimura, H. Tsuya, T. Kawamura J.Electrochem.Soc. 128 1579 (1981)
K. Graff, H. Pieper Semiconductor Silicon ed. H.R. Huff, J. Kriegler, Y. Takeishi Electrochem.Soc. Pennington 1981 p. 331
K. Graff Aggregation Phenomena of Point Defects in Silicon ed. E. Sirtl, J. Goorissen, Electrochem.Soc. Pennington 1983 p. 121
E. Sirtl, A. Adler Zeitschrift f. Metallkunde 52 529 (1961)
F. Secco D’Aragona J.Electrochem.Soc. 119 948 (1972)
M. Wright Jenkins J.Electrochem.Soc. 124 757 (1974)
L. So, S.K. Ghandi Sol.State Electr. 20 113 (1977)
For the determination of oxygen content new ASTM calibration factor has been used. Annual Book of ASTM Standards, Part 43, F121–83.
E.R. Weber Appl.Phys.A 30 1 (1983)
W.M. Bullis Sol.State Electr. 9 143 (1966)
C.S. Fuller, F.J. Morin Phys.Rev. 105 379 (1957)
H. Kitagawa, K. Hashimoto Jap.J.Appl.Phys. 16 173 (1977)
W.R. Wilcox, T.J. LaChapelle J.Appl.Phys. 35 240 (1964)
B.L. Sharma Diffusion in Semiconductors, Trans.Tech.Publ. Clausthal-Zellerfeld, Germany 1970
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Graff, K., Hefner, HA. & Pieper, H. Palladium-Test: A Tool to Evaluate Gettering Efficiency. MRS Online Proceedings Library 36, 19–24 (1984). https://doi.org/10.1557/PROC-36-19
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DOI: https://doi.org/10.1557/PROC-36-19