Abstract
The heat flow calculations have been performed to obtain the threshold energies for the melting of Si and Al during pulsed-laser irradiations under various laser conditions. The temperature dependent optical and thermal properties of the solids are deduced from the available experimental data. The melting threshold energies calculated for the solids are within the accuracy of the experimental values.
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References
P. Baeri and S.U Campisano in Laser Annealing of Semiconductors. J.M Poate and J.W Mayer editors (Academic Press, N.Y. 1982) pp. 75–109.
E. Rimin in Surface Modification and Alloying by Laser, Ion, and Electron Beams. J.M Poate, G. Foti and D.C Jacobson editors (Plenum Press, N.Y. 1983) pp. 15–49.
P.S. Peercy and W.R Wampler, Appl. Phys. Lett. 40, 768 (1982).
D.H. Lowndes, R.F Wood, and J. Narayan, Phys. Rev. Lett. 52, 561 (1984).
H.S. Carslaw and J.C Jaeger Conduction of Heat in Solids. (Oxford Univ. Press, London and N.Y., 1959).
E.H. Sin, C.K Ong and H.S Tan Phys. Stat Sol (a) 85, 199 (1984).
G.E. Jellison, Jr. and D.H Lowndes Appl. Phys. Lett. 41, 594 (1982).
G.E. Jellison, Jr. and F.A Modine Appl. Phys. Lett. 41, 180 (1982).
H.A. Weakliem and D. Redfield J. Appl. Phys. 50, 1491 (1979).
H.G. Dreehsen, C. Hartnich, J.H Schaefer and J. Uhlembusch J. Appl. Phys. 56, 238 (1984).
AIP Handbook, 3rd Ed (McGraw Hill, 1972) P6-125.
A.E. Bell, RCA Review 40, 295 (1979).
J. of Phys. and Chem. Ref. data 1, 305 (1972).
Ref. (11) P4-108.
G.E. Jellison, Jr. F.A. Modine 0RNL/TM-8002, Oak Ridge National Laboratory (1982).
J.L.Brandt. Aluminium vol I. K.R. Van Horn ed. (American Society for metals, 1967).
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Ong, C.K., Tan, H.S. & Sin, E.H. Threshold Energies for the Melting of Si and Al during Pilsed-Laser Irradiation. MRS Online Proceedings Library 35, 239–244 (1984). https://doi.org/10.1557/PROC-35-239
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DOI: https://doi.org/10.1557/PROC-35-239