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Effectiveness of Nitride Diffusion Barriers in a Self-Encapsulated Copper-Based Metallization.

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Abstract

Cu(Ti 27 at. %) and Cu(Cr 26 at. %) codeposited on silicon dioxide substrates were annealed in a flowing NH3 ambient at 400 - 600°C for 30 min. The Ti segregates to both the surface to form a TiN(O) layer and to the alloy/SiO2 interface to form a Ti-oxide/Ti-silicide bilayer. The Cr seems to migrate only to the free surface to form a CrNx layer. A 45 nm - thick Al film was deposited after nitridation, whereupon a second anneal was performed to evaluate these nitride layers as diffusion barriers. It was found that the Ti-nitride was stable up to 500°C as compared to Cr-nitride at 600°C.

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Authors and Affiliations

  1. Department of Chemical, Bio and Materials Engineering, Arizona State University, AZ, 85287 - 6006, USA

    D. Adams, R. L. Spreitzer, S. W. Russell, N. D. Theodore & T. L. Alford

  2. Center of Solid State Science, Arizona State University, AZ, 85287-1704, USA

    J. W. Mayer

Authors
  1. D. Adams
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  2. R. L. Spreitzer
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  3. S. W. Russell
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  4. N. D. Theodore
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  5. T. L. Alford
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  6. J. W. Mayer
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Adams, D., Spreitzer, R.L., Russell, S.W. et al. Effectiveness of Nitride Diffusion Barriers in a Self-Encapsulated Copper-Based Metallization.. MRS Online Proceedings Library 337, 231–236 (1994). https://doi.org/10.1557/PROC-337-231

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  • DOI: https://doi.org/10.1557/PROC-337-231

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