Abstract
In-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1-xGex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0.8 Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ~ 6–20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±1ML.
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Acknowledgments
The authors would like to thank J. L. Glasper for SIMS measurements. This work is supported in part by ESPRIT Project 6135 “MIDAS”.
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Pickering, C., Hope, D.A.O., Leong, W.Y. et al. In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si1-xGex Heterostructures and Multi-Quantum Wells. MRS Online Proceedings Library 324, 53–58 (1993). https://doi.org/10.1557/PROC-324-53
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DOI: https://doi.org/10.1557/PROC-324-53