Abstract
Time resolved reflectivity curves (TRR) in combination with non-equilibrium thermal model are used to estimate the temperature interval of chemical reactions in the systems Ni-Si (100) and Ni-SiO2-Si (100) for a ~ 500 nm thick Ni layer depending on the pulse energy density ranging from 0.5 J/cm2 to 1.0 J/cm2. Numerical simulations are performed to calculate the temperature field within the system and to analyze the reactivity of the system.
Similar content being viewed by others
References
H. von Kaenel, Sci. Rep. 8 (5), 1 (1990).
E. D’Anna, G. Leggieri and A. Luches, Appl. Phys. A 45, 325 (1988).
G.E. Jellison, Jr., D.H. Lowndes, D.N. Mashburn and R.F. Wood, Phys.Rev.B 34, 2407 (1986).
Z. Dohnálek, V. Cháb, I. Lukeš and R. Šášik, Proc. of LAMP’92, Nagaoka, Japan, June 1992, 275.
R. Černý, R. Šášik, I. Lukeš and V. Cháb, Phys. Rev. B 44, 4097 (1991).
I. Lukeš, R. Šášik and R. Cerny, Appl. Phys. A 54, 327 (1992).
T. Engel, Surface Sci. Rep. 18 (4), 91 (1993).
Acknowledgments
This paper is based upon work supported by the Grant Agency of Czech Republic, under grant # 202/93/2383.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Černý, R., Přikryl, P., El-Kader, K. et al. Kinetics of Ni Silicides Synthesis with Excimer Laser Pulses Studied by Trr. MRS Online Proceedings Library 320, 415–420 (1993). https://doi.org/10.1557/PROC-320-415
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-320-415