Abstract
We have developed a novel solid-state method for forming interfacial silicon dioxide by a two step process of rf sputtering tin-doped indium oxide (ITO), a transparent conductor, onto Si substrates followed by annealing at 800°C in flowing ultra-high purity nitrogen. TEM, XRD, FTIR, and C-V measurements were used to characterize the microstructure and morphology of as-deposited and annealed samples. The silicon dioxide layer grows interfacially between Si and In2O3 and, for a 5 nm thick oxide, is planar on a 2–4 monolayer scale over hundreds of nm. The kinetics of the solid-state interfacial oxidation reaction were studied and a model has been developed.
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Yang, C.W.O., Shigesato, Y. & Paine, D.C. Oxidation of Si via Solid State Interfacial Reaction with Deposited Sn-Doped In2O3. MRS Online Proceedings Library 318, 109–114 (1993). https://doi.org/10.1557/PROC-318-109
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DOI: https://doi.org/10.1557/PROC-318-109