Abstract
An in situ study of electron beam irradiation induced amorphous-to-crystalline transformation of A12O3 films on silicon substrates has been carried out using transmission electron microscopy. Trigonal α-Al2O3 crystallites can be observed for electron beam dose rates larger than 10 mA/cm2. It is found that the nucleation and growth processes dominate near the Al2O3-Si interface. The possible effect of the silicon substrate on the growth of A12O3 crystallites is considered.
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Liu, J., Barbero, C.J., Corbett, J.W. et al. Electron Irradiation Induced Crystallization of Amorphous Al2O3 Films on Silicon Substrates. MRS Online Proceedings Library 311, 239–244 (1993). https://doi.org/10.1557/PROC-311-239
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DOI: https://doi.org/10.1557/PROC-311-239