Abstract
Dry etching of a Pt/PbZrxTi1−xO3/Pt (Pt/PZT/Pt) ferroelectric capacitor stack with CF4/Ar plasmas with a reactive ion etching process for the fabrication of micrometer-sized integrated ferroelectric capacitors is described. The etch rate for both Pt and PZT is determined as a function of the process settings: Power, pressure and CF4-Ar gas flow ratio. A chemical enhancement of the etch rate is found for PZT. It is shown that it is possible to etch the Pt/PZT/Pt ferroelectric capacitor stack in a CF4/Ar plasma in a single lithographic process using patterning by photoresist masking. Redeposition processes occurring during etching are described.
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Van Glabbeek, J.J., Spierings, G.A.C.M., Ulenaers, M.J.E. et al. Reactive ion Etching of Pt/PbZrxTi1−xO3/Pt Integrated Ferroelectric Capacitors. MRS Online Proceedings Library 310, 127–132 (1993). https://doi.org/10.1557/PROC-310-127
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DOI: https://doi.org/10.1557/PROC-310-127