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Junction Formation in Silicon by Rapid Thermal Annealing

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Abstract

The feasibility of using isothermal RTA in annealing ion implanted layers for forming junctions has been investigated for the past 10 years. While many of the scientific details surrounding defect formation, transient diffusion and dopant activation remain to be clarified, RTA intrinsically is a viable annealing process which is essential for fabricating advanced silicon devices.

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Authors and Affiliations

  1. Center for Microelectronic Systems Technologies, MCNC, Research Triangle Park, N.C., 27709, USA

    Richard B. Fair

  2. Department of Electrical Engineering, Duke University, Durham, N.C., 27706, USA

    Richard B. Fair

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Fair, R.B. Junction Formation in Silicon by Rapid Thermal Annealing. MRS Online Proceedings Library 303, 311–324 (1993). https://doi.org/10.1557/PROC-303-311

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