Abstract
Light emitting nanocrystalline silicon has been prepared by a completely dry processing which uses standard silicon technology. This enables us to prepare compact films on various substrates and to control the crystallite size. Dependence of the photoluminescence intensity and its peak energy on the crystallite size is reported and compared with current theoretical models.
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Acknowledgments
We should like to thank Prof. F. Koch and his coworkers for many stimulating discussions. This work has been supported in part by the Deutsche Forschungsgemeinschaft.
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Veprek, S., Rückschloß, M., Landkammer, B. et al. Photoluminescence from Nanocrystalline Silicon Prepared by Plasma CVD and Oxidation. MRS Online Proceedings Library 298, 117–122 (1993). https://doi.org/10.1557/PROC-298-117
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DOI: https://doi.org/10.1557/PROC-298-117