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Inhomogeneity in the Network Order of Device Quality a-Si:H

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Abstract

In this paper we show that the degree of order of the Si network in a-Si:H is increasing with two length scales from the surface into the bulk. The major manifestation of the disorder is the variation in the Si-Si bond-stretching rather than the variation in the width of the dihedral angle distribution. The results are interpreted in terms of the decrease of the hydrogen concentration from the free surface into the bulk.

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Acknowledgments

The authors are indebted to A. Catalano and B.P. Nelson for the samples used in this study. This work was supported in part by EPSCoR-NSF grant EHR-9108775, in part by U.S. Army Research Office grant No. DAALO3-89-G-0114, and in part by the U.S.-Israel Binational Science Foundation.

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Authors and Affiliations

  1. Physics Department, University of Puerto Rico, Rio Piedras, P.R. China, 00931

    G. Morell, R.S. Katiyar, S.Z. Weisz & M. Gomez

  2. Racah Institute of Physics, The Hebrew University, Jerusalem, 91904, Israel

    I. Balberg

Authors
  1. G. Morell
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  2. R.S. Katiyar
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  3. S.Z. Weisz
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  4. M. Gomez
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  5. I. Balberg
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Morell, G., Katiyar, R., Weisz, S. et al. Inhomogeneity in the Network Order of Device Quality a-Si:H. MRS Online Proceedings Library 297, 321–326 (1993). https://doi.org/10.1557/PROC-297-321

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  • DOI: https://doi.org/10.1557/PROC-297-321

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