Abstract
The properties of SiO2 and Si3N4 films deposited by an ArF excimer laser, glow discharge electron beam and conventional plasma-enhanced CVD are compared. The deposition apparatus, technique, and conditions in addition to the physical, chemical and electrical properties of the films are discussed.
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Emery, K.A., Thompson, L.R., Bishop, D. et al. Beam-Assisted CVD of Microelectronic Films. MRS Online Proceedings Library 29, 81–92 (1983). https://doi.org/10.1557/PROC-29-81
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DOI: https://doi.org/10.1557/PROC-29-81