Abstract
We report the observation of magnetic-field dependent excitonic photoluminescence energies and linewidths in ordered and disordered In0.48Ga0.52P alloys (lattice matched to GaAs). The photoluminescence measurements were made at 1.4 K and the applied magnetic field ranged between 0 and 13.6 tesla. With increasing magnetic fields, we observe increasing photoluminescence linewidths for disordered alloys and decreasing photoluminescence linewidths for the ordered alloys. The magnetic field dependence of the photoluminescence peak-energy shifts for all samples (ordered and disordered) is in good agreement with theoretical considerations. The presence of CuPt-type ordering was confirmed by transmission electron microscopy.
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Acknowledgement
The authors wish to thank Dr. J. F. Klemi for many valuable discussions. This work was supported in part by the Division of Material Science, Office of Basic Energy Science, U. S. DOE, No. DE-AC04-76P00789.
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Jones, E.D., Follstaedt, D.M., Lyo, S.K. et al. Exciton Magnetoluminescence Studies in Ordered and Disordered In0.48Ga0.52P Semiconductor Alloys. MRS Online Proceedings Library 281, 61–66 (1992). https://doi.org/10.1557/PROC-281-61
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DOI: https://doi.org/10.1557/PROC-281-61