Abstract
Recent studies on strained layer heteroepitaxy in high misfit systems (eg. Ge on Si) have clearly indicated the importance of elastic strain on a number of surface-mediated growth effects. In this work we consider the transition from ideal, 2-D layer-by-layer growth to the initial stages of a 3-D growth morphology as a precursor to misfit dislocation injection in GeχSi1−χ/Si heterostructures with χ as low as 0.15. Experimentally, we have studied a wide range of MBE-and CVD-grown single and multilayer GeχSi1−χ/Si (χ<0.5) structures using transmission electron microscopy and photoluminescence spectroscopy. Firstly, we describe a new mechanism for the heterogeneous nucleation of misfit dislocations in strained epitaxial layers, the s'double half-loops' source, which originates from atomic-scale (<1.5 nm) interfacial perturbations. Secondly, the atomic-scale dilatational perturbations, which can exist in areal densities up to:_109 cm−2, have been identified as the origin of intense, broad-band PL from MBE-grown GeχSi1−χ/Si strained layers. The change in PL behaviour with increasing strained layer thickness has been used to study the effects of elastic strain-induced surface roughening at low misfits.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
For a recent review see: K. Eberl and W. Wegscheider, to be published in: Handbook of Semiconductors, Vol. 3: Materials, Properties and Preparation, edited by, S. Mahajan.
D.D. Perovic, G.C. Weatherly, J.-M. Baribeau and D.C. Houghton, Thin Solid Films, 183, 141 (1989).
D.C. Houghton, J. Appl. Phys., 70, 2136 (1991).
The use of plan-view imaging from wedge-profile specimen regions, where the heterostructure interfaces are clearly delineated due to thin foil surface relaxation effects [ee D.D. Perovic and G.C. Weatherly, Ultramicroscopy, 35, 271 (1991)], allows for representative imaging of defect configurations within specific areas of a given heterostructure without the need for cross-sectional analysis.
J.-P. Noël, N.L. Rowell, D.C. Houghton, A. Wang and D.D. Perovic, Appl. Phys. Lett., 61, 690 (1992).
J.C. Sturm, H. Manoharn, L.C. Lenchyshyn, M.W. Thewalt, N.L. Rowell, J.-P. Noël and D.C. Houghton, Phys. Rev. Lett., 66, 1362 (1991).
J.C. Bean, L.C. Feldman, A.T. Fiory, S. Nakahara and I.K. Robinson, J. Vac. Sci. Technol. A, 2, 436 (1984).
A.J. Hoeven, J.M. Lenssinck, D. Dijkkamp, E.J. van Loenen and J. Dieleman, Phys. Rev. Lett., 63, 1830 (1989).
B.S. Swartzentruber, Y.-W. Mo, M.B. Webb and M.G. Lagally, J. Vac. Sci. Technol. A, 7, 2901 (1989).
Such an argument has previously been used to explain step-driven, long-range ordering in GexSi1−x/Si; see: D.E. Jesson, S.J. Pennycook, J.-M. Baribeau and D.C. Houghton, Phys. Rev. Lett., 68, 2062 (1992).
D.D. Perovic and D.C. Houghton, in: Mechanisms of Heteroepitaxial Growth, edited by, M.F. Chisholm, B.J. Garrison, R. Hull and L.J. Schowalter, Mat. Res. Soc. Symp. Proc, Vol. 263 (1992).
Acknowledgements
Financial support through the Natural Sciences and Engineering Research Council of Canada (NSERC) is gratefully acknowledged.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Perovic, D.D., Whitehurst, J., Noel, J.P. et al. The Influence of Strain-Mediated Morphological Changes on the Structural and Optical Properties of MBE-Grown GeSi/Si. MRS Online Proceedings Library 281, 467–472 (1992). https://doi.org/10.1557/PROC-281-467
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-281-467