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Surface Behavior and Lattice Relaxation of SiGe/Si Strained Epitaxial Heterostructures

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The correlation between the surface morphology and the lattice relaxation in strained SiGe/Si heteroepitaxy has been studied. It is found that the surface crosshateched pattern develops as the strained epilayer thickness increases. The effect of thermal annealing and boron dopant level has also been studied. The result suggests that the crosshatched morphology on the surface is constituted by surface slip steps of glissile dislocation motion in the strained epitaxial growth processing.

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Authors and Affiliations

  1. Analog Integrated Circuit Division, Semiconductor Products Sector, Motorola, Inc., 2200 W. Boardway, MD M285, Mesa, AZ, 85202, USA

    Kevin H. Chang

  2. Core Technology, Semiconductor Products Sector, Motorola, Inc., 5005 E. McDowell, MD: A170, Phoenix, AZ, 85008, USA

    H. Ming Liaw

Authors
  1. Kevin H. Chang
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  2. H. Ming Liaw
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Chang, K.H., Ming Liaw, H. Surface Behavior and Lattice Relaxation of SiGe/Si Strained Epitaxial Heterostructures. MRS Online Proceedings Library 280, 719–724 (1992). https://doi.org/10.1557/PROC-280-719

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  • DOI: https://doi.org/10.1557/PROC-280-719

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