Abstract
Nb/MgO/Bi2Sr2CaCu2Ox (BSCCO) tunnel junctions using both amorphous and crystalline MgO barriers were fabricated using a BSCCO single crystal in order to compare their superconducting states of interface. Both MgO thin films, 4-8 nm thick and with full coverage, were deposited onto BSCCO single crystals using the MBE method. The junctions using amorphous and crystalline MgO films were found to have gap opening structures at a bias voltage of about 38 mV and 25 mV at 5.2 K, respectively. The gap opening of the junction using an amorphous MgO barrier occurred below 86 K, corresponding very closely with the Tc for the BSCCO single crystal. Its characteristics showed a BCS-like temperature dependence.
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Acknowledgement
This work was performed under the management of FED (the R&D Association for Future Electron Devices) as a part of the R&D of Basic Technology for Future Industries supported by NEDO (New Energy and Industrial Technology Development Organization).
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Usuki, T., Yamano, K., Shimaoka, K. et al. Fabrication and Characterization of Nb/MgO/Bi2Sr2CaCu2Ox Tunnel Junctions Using a Single Crystal. MRS Online Proceedings Library 275, 705–710 (1992). https://doi.org/10.1557/PROC-275-705
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DOI: https://doi.org/10.1557/PROC-275-705