Abstract
Anomalous splitting has been observed in the photoreflectance (PR) response of SI:GaAs in the vicinity of the exciton at 78 K. Recent photolUminescence (PL) measurements suggest the splitting is correlated with the EL2 content of the samples. Separation between the two peaks in PR measurements range from about 2 to 4 meV. A striking effect is that each peak is maximized by a different phase setting of the lock-in. The splitting is sample dependent and is also affected by several other factors including surface conditions, temperature, pump beam intensity and modulation frequency.
Similar content being viewed by others
References
F.H. Pollak, Proc. SPIE 276, 142 (1981).
O.J. Glembocki, B.V. Shanabrook, N. Bottka, W.T. Beard and J. Comas, Appl. Phys. Lett. 46, 970 (1985).
P.W. Yu, Appl. Phys. Lett. 44, 330 (1984).
B.V. Shanabrook, E.M. Klein, E.M. Swiggard and S.G. Bishop, J. Appl. Phys. 54, 336 (1983).
Tajima, Michio, 5th Conference on Semi-insulating III–V Materials held in Malmo, Sweden, June 1988, edited by G. Grossmann and L. Ledebo, (A. Hilger 1988).
C.A. Warwick and G.T. Brown, Appl. Phys. Lett. 46, 574 (1985).
C.G. Kirkpatrick, et al., Semi-Insulating GaAs, edited by R.K. Willardson and Beer, Albert C., Semiconductors and Semimetals Vol. 20 (Academic Press, Inc. 1984).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Durbin, C., Estrera, J., Glosser, R. et al. EL2 Related Anomalous Splitting in the Photoreflectance Response of Semi-Insulating GaAs. MRS Online Proceedings Library 262, 289–294 (1992). https://doi.org/10.1557/PROC-262-289
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-262-289