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Evaluation of Vacancy-Type Defects in Simox Substrates by a Slow Positron Beam and a Pulsed Positron Beam

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Abstract

Slow/monoenergetic positron beams and pulsed positron beams have been used as a non-destructive probe to investigate vacancy-type defects in SIMOX substrates which were formed by high - dose oxygen implantation and high-temperature annealing. To obtain depth profiles of vacancy-type defects, a positron beam in the 0–30keV energy range was used. Doppler broadened annihilation spectrum and positron lifetime were measured as a function of incident positron energy. These measurements show the following results; vacancy -type defects exist near the surface of the top silicon layer even if the specimen was analyzed as defect-free Silicon by XTEM, and in the case of the as-implanted specimen, cavities in diameter of about 50–200A are created in the top silicon layer and they include high pressure gases.

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Authors and Affiliations

  1. Mitubishi Electric Corporation, Tsukaguchi-Honmachi, Amagasaki, Hyogo, 661, Japan

    H. Kametani, H. Akiyama, Y. Yamaguchi & M. Koumaru

  2. Institute of Material Science, University of Tukuba, Tennoudai, Tsukuba, Ibaragi, 305, Japan

    L. Wei, Y. Tabuki & S. Tanigawa

  3. Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, Hongo, Bunkyou-ku, Tokyo, 113, Japan

    A. Uedono, S. Watauchi & Y. Ujihira

  4. Electrotechnical Laboratory, Umezono, Tsukuba, Ibaragi, 305, Japan

    R. Suzuki, H. Ohgaki & T. Mikado

Authors
  1. H. Kametani
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  2. H. Akiyama
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  3. Y. Yamaguchi
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  4. M. Koumaru
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  5. L. Wei
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  6. Y. Tabuki
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  7. S. Tanigawa
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  8. A. Uedono
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  9. S. Watauchi
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  10. Y. Ujihira
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  11. R. Suzuki
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  12. H. Ohgaki
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  13. T. Mikado
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Kametani, H., Akiyama, H., Yamaguchi, Y. et al. Evaluation of Vacancy-Type Defects in Simox Substrates by a Slow Positron Beam and a Pulsed Positron Beam. MRS Online Proceedings Library 262, 235–240 (1992). https://doi.org/10.1557/PROC-262-235

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  • DOI: https://doi.org/10.1557/PROC-262-235

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