Skip to main content
SpringerLink
Log in

Structure and Carrier-Transport in a-Si:H, a-Si(Ge): H Films Prepared by Chemical Annealing

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

The stability and opto-electric properties of a-Si:H films fabricated by "chemical annealing (CA)" with excited states of He (He*) were systematically investigated. The films made by the CA mode showed a high photoconductivity due to a low level of defect density, 2x—1015cm-3, and improvement in the stability against light soaking. A marked improvement was also found in the hole-transport in films fabricated by the CA. The structural relaxation on the growing surface was also enhanced by addition of a small amount of Ge.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. D. Das, H. Shirai, J. Hanna and I. Shimizu, Jpn. J. Appl. Phys., 30 (1991) L239

    Article  CAS  Google Scholar 

  2. H. Shirai, D. Das, J. Hanna and I. Shimizu, Appl. Phys. Lett., 59 (1991) 1096

    Article  CAS  Google Scholar 

  3. H. Shirai, T. Ariyoshi, J. Hanna and I. Shimizu, J. Non-cryst. Solids, 137&138 (1991) 693

    Article  Google Scholar 

  4. A. H. Mahan, J. Carapella, B. P. Nelson, R.S. Crandall and I. Balberg, J. Appl. Phys 69 (1991) 6728

    Article  CAS  Google Scholar 

  5. G. Ganguly and A. Matsuda, Tech. Digest of the 3rd Sunshine Workshop (Yokohama, 1991) pp51

    Google Scholar 

  6. A. Mahan and M. Vanecek, Tech. Digest of the 3rd Sunshine Workshop (Yokohama, 1991) pp3

    Google Scholar 

  7. H. Shirai, J. Hanna and I. Shimizu, Jpn. J. Appl. Phys., 30 (1991) L881

    Article  CAS  Google Scholar 

  8. H. Shirai, K. Nakamura, J. Hanna and I. Shimizu, J. Non-cryst. Solids, 137&138 (1991) 653

    Article  Google Scholar 

  9. D. Ritter, K. Waiser and E. Zeldov, J. Appl. Phys., 62 (1987) 4563

    Article  CAS  Google Scholar 

  10. W. Meyer and H. Neldel, Z. Tech. Phys., 12 (1937) 588

    Google Scholar 

  11. N. Shibata, S. Oda, and I. Shimizu, Jpn. J. Appl. Phys., 26 (1987) L276

    Article  CAS  Google Scholar 

  12. R. Meaudre, M. Meaudre, P. Roca i Cabairocas, S. Tanidi, Y. Bouizen and M. L. Theye, J. Non-cryst. Sotids, 137&138 (1991) 171

    Article  Google Scholar 

Download references

Acknowledgement

This work was supported in part by a Grant-in-Aid for Scientific Research No 02402021 and in part by the Sunshine Project of MITI.

Author information

Authors and Affiliations

  1. The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku, Yokohama-city, Japan, 227

    Hajime Shirai, Kenjiro Nakamura, Masanobu Azuma, Jun-ichi Hanna & Isamu Shimizu

Authors
  1. Hajime Shirai
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Kenjiro Nakamura
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Masanobu Azuma
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Jun-ichi Hanna
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Isamu Shimizu
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Shirai, H., Nakamura, K., Azuma, M. et al. Structure and Carrier-Transport in a-Si:H, a-Si(Ge): H Films Prepared by Chemical Annealing. MRS Online Proceedings Library 258, 511–516 (1992). https://doi.org/10.1557/PROC-258-511

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-258-511

Search

Navigation