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NP Heterojunction Porous Silicon Light-Emitting Diode

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Abstract

We report the first demonstration of visible light emission from an all solid-state n-p heterojunction diode based on porous silicon. The p-type silicon was electrochemically etched in a hydrofluoric acid solution to form a porous silicon region; the n-p heterojunction diode was fabricated by depositing a wide bandgap n-type semiconductor, indium-tin-oxide (ITO), onto the surface of the porous silicon. With positive bias applied, electroluminescence was observed with a relatively narrow peak at about 580 nm. The device showed strong rectifying properties and no light emission was observed under reverse bias condition. Photoluminescence in the red, orange, yellow, and green was also observed in separate sample preparations.

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Acknowledgement

We would like to acknowledge that this work was supported in part by a Phase I SBIR program funded by the Strategic Defense Initiative Organization (SDIO) and monitored by the US Army Research Office. We would also like to extend our appreciation to all Spire staff contributing to this work, especially to J. Wollam and P. Littlefield for deposition of ITO layers, and E. Johnson and C. VonBenken for EL measurements with photomultiplier.

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Authors and Affiliations

  1. Spire Corporation, One Patriots Park, Bedford, MA, 01730-2396, USA

    Nader M. Kalkhoran, F. Namavar & H. P. Maruska

Authors
  1. Nader M. Kalkhoran
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  2. F. Namavar
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  3. H. P. Maruska
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Kalkhoran, N.M., Namavar, F. & Maruska, H.P. NP Heterojunction Porous Silicon Light-Emitting Diode. MRS Online Proceedings Library 256, 89–94 (1991). https://doi.org/10.1557/PROC-256-89

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  • DOI: https://doi.org/10.1557/PROC-256-89

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