Abstract
PZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550–600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.
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Chiang, C.K., Wong-Ng, W., Cook, L.P. et al. Post-Processing of Pulsed Laser-Deposited Pzt Thin Films. MRS Online Proceedings Library 243, 519–523 (1991). https://doi.org/10.1557/PROC-243-519
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DOI: https://doi.org/10.1557/PROC-243-519