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SOI Interface Structures in Selective Epitaxial Growth

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Abstract

Silicon-on-insulator structures were formed by the selective epitaxial growth (SEG) of silicon and the epitaxial lateral overgrowth (ELO) of oxide shapes using an LPCVD hot-walled reactor at 850°C. The homoepitaxial interface changed character with modifications of the gas composition during the in-situ pre-epitaxial bake at 900°C. HREM images show ellipsoid-shaped inclusions lying along the homoepitaxial interface for silicon growth conducted with no dichlorosilane (DCS) flow during the prebake in H2. SIMS analysis indicates a large oxygen, fluorine, and carbon concentration at the interface. For structures grown with a small DCS flow in addition to H2 during the prebake, the homoepitaxial structural defects and the oxygen, fluorine, and carbon peaks are removed.

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Acknowledgements

This work was supported by the Director, Office of Basic Energy Sciences, Materials Science Division of the U.S. Department of Energy under contract number DEAC0376SFOO098. The assistance of the staff and access to the facilities of the National Center for Electron Microscopy is gratefully acknowledge.

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Author notes

  1. J. C. Lou

    Present address: Dept. of EEIE, National Jiao-Tung University, Hschien, Taiwan

Authors and Affiliations

  1. Dept. of Materials Science and Mineral Engineering, University of California Berkeley, and the National Center for Electron Microscopy, Lawrence Berkeley Laboratory, Berkeley, CA, USA

    Zara S. Weng & R. Gronsky

  2. Dept. of Electrical Engineering and Computer Science, University of California Berkeley, Berkeley, CA, USA

    J. C. Lou & W. G. Oldham

Authors
  1. Zara S. Weng
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  2. R. Gronsky
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  3. J. C. Lou
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  4. W. G. Oldham
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Weng, Z.S., Gronsky, R., Lou, J.C. et al. SOI Interface Structures in Selective Epitaxial Growth. MRS Online Proceedings Library 238, 707–712 (1991). https://doi.org/10.1557/PROC-238-707

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  • DOI: https://doi.org/10.1557/PROC-238-707

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