Abstract
In situ x-ray photoelectron spectroscopy (XPS) is used to study the nature of the bonding at CdTe/InSb and ZnSe/GaAs interfaces grown by molecular beam epitaxy. A comparison of the In3d core level features from the InSb epilayer surface, a Tereacted InSb surface, very thin (a few monolayers) CdTe/InSb epilayer/epilayer heterostructures and from separately grown (In,Te) epilayers, indicate similar In bonding characteristics for the Te-reacted layer, the CdTe/InSb heterostructures and the (In,Te) epilayers. A parallel XPS study of ZnSe/GaAs interfaces leads to the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming IIVI/ III-V junctions.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
R.L. Gunshor, L.A. Kolodziejski, M.R. Melloch, M. Vaziri, C. Choi, and N. Otsuka, Appl. Phys. Lett.50200 (1987).
G.D. Studtmann, R.L. Gunshor, L.A. Kolodziejski, M.R. Melloch, J.A. CooperJr, R.F. Pierret, D.P. Munich, C. Choi, and N. Otsuka, Appl. Phys. Lett.521249 (1988).
T.C. Tamargo, J.L. de Miguel, D.M. Hwang, and H.H. Farrell, J. Vac. Sci. Technol.B6784 (1988).
I. Suemune, K. Ohmi, T. Kanda, K. Yukutake, Y. Kan, and M. Yamanishi, Jpn J. Appl. Phys.25L827 (1986).
N. Kobayashi, Jpn J. Appl. Phys.27L1597 (1988).
Q.-D. Qian, J. Qiu, M.R. Melloch, J.A. CooperJr, L.A. Kolodziejski, M. Kobayashi, and R.L. Gunshor, Appl. Phys. Lett.541359 (1989).
Q.-D. Qian, J. Qiu, M. Kobayashi, R.L. Gunshor, M.R. Melloch,and J.A. CooperJr, J. Vac. Sci. Technol.B7793 (1989).
Y.-H. Wu, Y. Kawakami, S. Fujita, and S. Fujita, Jpn. J. Appl. Phys.29L144 (1991).
K.J. Mackey, D.R.T. Zahn, P.M.G. Allen, R.H. Williams, W. Richter, and R.S. Williams, J Vac. Sci. Technol.B51233 (1987).
T.D. Golding, M. Martinka, and J.H. Dinan, J. Appl. Phys.641873 (1988).
G.M. Williams, A.G. Cullis, S.J. Barnett, C.R. Whitehouse, T.D. Golding, and J.H. Dinan, J. Vac. Sci. Technol.A9(1) 71 (1991).
T.D. Golding, S.K. Green, M. Pepper, J.H. Dinan, A.G. Cullis, G.M. Williams and C.R. Whitehouse, Semiconductor Science Technology5S311 (1990).
J. Qiu, Q.-D. Qian, R.L. Gunshor, M. Kobayashi, D.R. Menke, D. Li, and N. Otsuka, Appl. Phys. Lett.561272 (1990).
D. Li, J.M. Gonsalves, N. Otsuka, J. Qiu, M. Kobayashi, and R.L. Gunshor, Appl. Phys. Lett.57449 (1990).
J. Qiu, D.R. Menke, M. Kobayashi, R.L. Gunshor, D. Li, Y. Nakamura, and N. Otsuka, to appear in Appl. Phys. Lett. (1991).
H. Raether, “Excitation of plasmons and Interband Transitions by Electrons” Springer Tracts in Modern Physics, 88, 53 (1980).
F.D. Lubbers and V. Leute, J. Solid State Chem., 43339 (1982).
D.R. Menke, J. Qiu, R.L. Gunshor, M. Kobayashi, D. Li, Y. Nakamura, and N. Otsuka, to appear in J. Vac. Sci. Technol.B9 (1991).
D. Li, N. Otsuka, J. Qiu, J. GlennJr, M. Kobayashi, and R.L. Gunshor, Mat. Res. Soc. Symp. Proc., 161, 127 (1990).
J.L. GlennJr, O Sungki, L.A. Kolodziejski, R.L. Gunshor, M. Kobayashi, D. Li, N. Otsuka, M. Haggerott, N. Pelekanos, and A.V. Nurmikko, J. Vac. Sci. Technol.B7249 (1986).
Acknowledgement
The XPS measurement and interpretation were performed in collaboration with J. Qiu and D. Menke. The authors are indebted to J.H. Weaver for providing the curve fitting software for the XPS data analysis. The authors thank W.N. Delgass and his coworkers for fruitful discussions about the XPS technique, and also acknowledge the contributions to this work by D.A. Lubelski, J. Han, and T. Stavrinides. This work is supported by AFOSR (AFOSR-89-0438), the DARPA/ONR URI (218-25015), and NSF/MRG (8913706-DMR).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Gunshor, R.L., Kobayashi, M. & Otsuka, N. Interface Properties of II-VI/III-V Heterostructures. MRS Online Proceedings Library 221, 303–310 (1991). https://doi.org/10.1557/PROC-221-303
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-221-303