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X-Ray Topography Studies of Oxygen Precipitates in MCZ Silicon

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Abstract

X-ray section topography has been used to study the distribution and size of precipitates resulting from heat treatment of MCZ silicon. A low density of precipitates was found, enabling individual precipitate images to be studied. Images have been simulated by numerical solution of Takagi's equations and the magnitude of the strain field deduced by comparison with experiment. Excellent agreement has been found in the details of simulated and experimental images. The effective defect volume increased monotonically with annealing temperature. The effect of surface relaxation and long range curvature on the accuracy of determining the microscopic strain field by matching simulated and experimental images has been investigated.

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Acknowledgement

The work was supported by the Science and Engineering Research Council and a Royal Society Academic Exchange grant. AJH acknowledges financial support from SERC and Bede Scientific Instruments through a CASE studentship.

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Authors and Affiliations

  1. Physics Department, University of Durham, South Road, Durham., DH1 3LE, UK

    Anthony J. Holland, G. Stephan Green & Brian K. Tanner

  2. Institute of Physics, Chinese Academy of Sciences, Beijing, P.R., China

    Mai Zhenhong

Authors
  1. Anthony J. Holland
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  2. G. Stephan Green
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  3. Brian K. Tanner
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  4. Mai Zhenhong
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Holland, A.J., Green, G.S., Tanner, B.K. et al. X-Ray Topography Studies of Oxygen Precipitates in MCZ Silicon. MRS Online Proceedings Library 209, 475–480 (1990). https://doi.org/10.1557/PROC-209-475

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  • DOI: https://doi.org/10.1557/PROC-209-475

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