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Adsorption and Decomposition of Diethylsilane on Silicon Surfaces

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Abstract

Diethylsilane (DES), Si(C2H5)2H2, is a promising candidate for the atomic layer epitaxy of silicon. The adsorption and decomposition kinetics of DES on silicon surfaces were studied using laser-induced thermal desorption (LITD), temperature programmed desorption (TPD), and Fourier transform infrared (FTIR) spectroscopy. FTIR studies on porous silicon surfaces indicated that DES dissociatively adsorbs below 600 K and produces Si-H and Si-C2H5 surface species. The desorption products following DES adsorption on Si(111) 7x7 were C2H4 and H2 for all surface coverages using both LITD and TPD techniques. Ethylene and H2 desorption occurred at 700 and 810 K, respectively, during TPD experiments with a heating rate of pd = 9 K/s. Ethylene desorption was consistent with a pd-hydrogen elimination mechanism from the Si-C2H2 surface species. Isothermal LITD studies monitored the desorption kinetics of C2 H4 from Si (111) 7x7 as a function of time following DES exposures. The first-order ethylene desorption kinetics were Ed = 36 kcal/mol and vd = 2.7 × 109 s−1. Additional LITD measurements determined that le initial reactive sticking coefficient of DES on Si(111) 7x7 decreased versus surface temperature. The temperature-dependent sticking coefficients suggested a precursormediated adsorption mechanism.

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Acknowledgement

This work was supported by the Office of Naval Research under Contract N00014-90-J1281. Some of the equipment utilized in this work was provided by the NSR-MRL program through the Center for Materials Research at Stanford University. We thank David A. Roberts of the J.C. Schumacher Co. both for supplying the diethylsilane and for numerous helpful discussions. MLW gratefully acknowledges the AT&T Bell Laboratories for a graduate fellowship. SMG acknowledges the National Science Foundation for a Presidential Young Investigators Award and the A.P. Sloan Foundation for a Sloan Research Fellowship.

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Authors and Affiliations

  1. Department of Chemistry, Stanford University Stanford, CA, 94305, USA

    P. A. Coon, M. L. Wise, A. C. Dillon, M. B. Robinson & S. M. George

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  1. P. A. Coon
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  2. M. L. Wise
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  3. A. C. Dillon
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  4. M. B. Robinson
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  5. S. M. George
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Coon, P.A., Wise, M.L., Dillon, A.C. et al. Adsorption and Decomposition of Diethylsilane on Silicon Surfaces. MRS Online Proceedings Library 204, 303–309 (1990). https://doi.org/10.1557/PROC-204-303

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