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Detection of Point Defect Chains in Ion Irradiated Silicon by High Resolution Electron Microscopy

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Abstract

In a lattice imaging study of As+ ion damaged Si, we have detected <110> chain type defects which are not associated with any significant strain or configurational changes. By image matching of the experimental and calculated micrographs of vacancies and interstitials, it is established that about 100% more interstitial atoms may incorporate into a defective chain. A structure model of this defect is proposed wherein a di-interstitial, occupying the <100> split position, is incorporated into every available site along a <110> chain.

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References

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Authors and Affiliations

  1. IBM T.J. Watson Research Center, Yorktown Heights, N.Y., 10598, U.S.A.

    W. Krakow, T. Y. Tan & H. Foell

Authors
  1. W. Krakow
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  2. T. Y. Tan
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  3. H. Foell
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Krakow, W., Tan, T.Y. & Foell, H. Detection of Point Defect Chains in Ion Irradiated Silicon by High Resolution Electron Microscopy. MRS Online Proceedings Library 2, 185 (1980). https://doi.org/10.1557/PROC-2-185

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  • DOI: https://doi.org/10.1557/PROC-2-185

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