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Luminescence of MBE SimGen Strained Monolayer Superlattices

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Abstract

SimGen, strained monolayer superlattices (SMS) have been fabricated by molecular beam epitaxy (MBE) and characterized using photoluminescence (PL). Symmetrically strained structures with different periodicities have been grown on top of a Si1−xGex, alloy buffer layer. Luminescence features below (above) the Si (Ge) energy bandgap have been observed and attributed to either dislocations in the buffer layer or to energy band transitions in the SMS.

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Acknowledgemen

This work is in part supported by the Semiconductor Research Corporation and the Office of Naval Research.

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Authors and Affiliations

  1. Device Research Laboratory, 7619 Boelter Hall, Electrical Engineering Department, University of California, Los Angeles, CA, 90024, USA

    M. A. Kallel, V. Arbet-Engels, R. P. G. Karunasiri & K. L. Wang

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  1. M. A. Kallel
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  2. V. Arbet-Engels
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  3. R. P. G. Karunasiri
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  4. K. L. Wang
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Kallel, M.A., Arbet-Engels, V., Karunasiri, R.P.G. et al. Luminescence of MBE SimGen Strained Monolayer Superlattices. MRS Online Proceedings Library 198, 479–484 (1990). https://doi.org/10.1557/PROC-198-479

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