Abstract
The resistivity of sputter deposited Snx (SiO2)100-x films has been measured for Sn concentration x between 50 and 90 atomic percent. Films with more than 53 percent Sn are superconducting at low temperatures with transition temperatures slightly above that of bulk Sn. The enhancement is 0.11 K for the 90 percent film, increasing to 0.24 K in the 55 percent film. As the metal concentration decreases, the transition region broadens, with the resistance beginning to decrease about 1 K above the transition in the highest resistance films. The films remain superconducting in substantial magnetic fields. In the 55 percent film, a magnetic field of 1 T reduces the transition temperature by 1 K and a field greater than 2 T is needed to eliminate superconductivity. At the largest field of 6 T, there is no sign of superconductivity in any sample, and the resistances increase down to the lowest temperatures measured (100 mK).
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Acknowledgement
This work was supported by the Office of Naval Research under contract no. N00014-88-K003.
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Beamish, J.R., Patterson, B.M. & Unruh, K.M. Superconductivity in Granular Snx (SiO2)100-x Thin Films. MRS Online Proceedings Library 195, 385–390 (1990). https://doi.org/10.1557/PROC-195-385
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DOI: https://doi.org/10.1557/PROC-195-385