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Reduction of Internal Stress of a-Si:H Films by in Situ Measurements of Optical Emission Intensity from SiH4 Plasma

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Abstract

A parameter which determine internal stress of hydrogenated amorphous silicon (a-Si:H) prepared by plasma CVD method has been investigated to prevent a peeling off or crack forming problem. It is clarified that the internal stress changes from tension to compression as a function of supplied rf power density during deposition process. Supplied rf power density is closely connected to H o and SiH* optical emission intensity ratio (H α /SiH* ) of CVD plasma. Ve find that the internal stress can be reduced remarkably by controlling this ratio to 0.3. This H α/SiH* parameter has a superiority that the internal stress can be in situ controlled.

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Authors and Affiliations

  1. Hitachi Research Lab., Hitachi, Ltd., Hitachi City, Ibaraki, Japan

    K. Tamahashi, M. Wakagi, F. Ishikawa, T. Kaneko, K. Tamura, A. Satoh & M. Hanazono

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  1. K. Tamahashi
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  2. M. Wakagi
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  3. F. Ishikawa
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  4. T. Kaneko
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  5. K. Tamura
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  6. A. Satoh
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  7. M. Hanazono
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Tamahashi, K., Wakagi, M., Ishikawa, F. et al. Reduction of Internal Stress of a-Si:H Films by in Situ Measurements of Optical Emission Intensity from SiH4 Plasma. MRS Online Proceedings Library 192, 621–626 (1990). https://doi.org/10.1557/PROC-192-621

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  • DOI: https://doi.org/10.1557/PROC-192-621

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