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Methane Plasma Source Ion Implanted Ti-6Al-4V

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Abstract

Ti-6Al-4V alloy test coupons were ion implanted using methane Plasma Source Ion Implanter at an energy of 30 KeV. Multi-energy ion implantation, carbon film deposition as well as ion beam mixing were involved in this process. The resulted carbon profile is flat-top near the surface which forms a TiC layer. The implanted layer has demonstrated high load capacity and long life time under pin on disk wear test condition.

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Acknowledgement

We thank Paul Fetherston for operation of the implanter and Dr. Seunghee Han for useful discussions.

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Authors and Affiliations

  1. Plasma Source Ion Implantation Program, University of Wisconsin-Madison, Madison, WI, 53706

    Jie Chen, J. R. Conrad, R. A. Dodd & F. J. Worzala

Authors
  1. Jie Chen
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  2. J. R. Conrad
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  3. R. A. Dodd
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  4. F. J. Worzala
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Chen, J., Conrad, J.R., Dodd, R.A. et al. Methane Plasma Source Ion Implanted Ti-6Al-4V. MRS Online Proceedings Library 190, 11–16 (1990). https://doi.org/10.1557/PROC-190-11

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  • DOI: https://doi.org/10.1557/PROC-190-11

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