Abstract
Remote plasma enhanced chemical vapor deposition techniques have been developed for a wide variety of processes. These include SiO2, Si3N4, Si, Ge, GaN, GaAs, and a-Si:H depositions. This development has been enabled through the use of electron diffraction and electron spectroscopy techniques. These techniques have been used to qualify cleaning procedures prior to epitaxial or dielectric depositions. They have been used to qualify epitaxial deposition conditions by defining suitable temperature and rate conditions. And, they have been used to evaluate cross-contamination issues. In situ techniques have been used in conjunction with ex situ characterizations to identify and correct problems in wafer cleaning, epitaxy, and process integration.
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Acknowledgements
The authors wish to thank the support of M.J. Mantini, G.C. Hudson, G. Hamlett, and D. Kelley for their technical support. The authors wish to acknowledge the financial support of the Semiconductor Research Corporation, the North Carolina Sematech Center of Excellence, the Strategic Defense Initiative/Innovative Science and Technology Office, and the Office of Naval Research.
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Rudder, R., Fountain, G., Hattangady, S. et al. Development of Remote Plasma Enhanced Chemical Vapor Deposition Processes Through the Use of in Vacuo Electron Diffraction and Electron Spectroscopy. MRS Online Proceedings Library 165, 151–159 (1989). https://doi.org/10.1557/PROC-165-151
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DOI: https://doi.org/10.1557/PROC-165-151