Abstract
Electrical characterizations (I–V,C–V) of TiPtAu/n-type GaAs Schottky diodes were performed in order to investigate the electrical damage introduced by CH4JH2 RIE. The effective barrier height measured according to the thermionic conduction model decreases from 0.79 eV to 0.53 eV after RIE carried out at 1.3 W/cm2.
Recovery of the control I–V characteristics requires a wet chemical removal of 50 nm of the dry etched surface.
Doping profiles, derived from conventional C–V analysis at 80 K and 300 K, show a decrease in free carrier concentration within 500 nm from the surface. Hall measurementsbetween 4 K and 300 K show an increase in carrier mobility after RIE. These effects are essentially attributable to chemical neutralization of the silicon dopants by hydrogen. Thermal annealing at 360°C leads to an almost complete recovery of the electrical activity and of the control Schottky barrier height.
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Collot, P., Gaonach, C. & Proust, N. Electrical Damage Introduced in GaAs by Reactive Ion Etching using CH4/H2 mixture. MRS Online Proceedings Library 144, 507–512 (1988). https://doi.org/10.1557/PROC-144-507
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DOI: https://doi.org/10.1557/PROC-144-507