Abstract
The surface regions of semiconductor single crystals have been examined following laser annealing in an ultrahigh vacuum environment with the output of a pulsed ruby laser. Atomically clean surfaces with impurity levels below 0.1% of a monolayer can be produced by multiple pulse irradiation. Ordered surface structures are produced on low index oriented crystals as well as crystals slightly misoriented. Metastable surface structures exhibiting (1×1) LEED patterns have been produced on (111) orientations and are believed to be a consequence of the rapid cooling rates of 109 degs/sec achieved with the laser irradiation process. The surface and subsurface regions of ion-implanted Si crystals have been examined both before and after laser irradiation and results obtained from Si samples implanted with As are discussed.
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Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.
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Zehner, D.M., White, C.W. Surface Studies of Laser Annealed Semiconductors. MRS Online Proceedings Library 13, 317–328 (1982). https://doi.org/10.1557/PROC-13-317
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DOI: https://doi.org/10.1557/PROC-13-317