Skip to main content
SpringerLink
Log in

Epitaxial Deposition of 3C-SiC on Si Using Unconventional Sputtering of a Hollow Cathode

  • Article
  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Epitaxial 3C-SiC was grown using an unconventional technique for epitaxial growth. Thin films of 3C-SiC were deposited onto the (111) and (110) faces of Si using pulsed DC sputtering of a high purity, hollow cathode SiC target. The films were studied using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), and auger electron spectroscopy (AES) techniques. XRD results presented as Bragg diffraction spectra and pole figures, and electron diffraction patterns verify crystal orientation and epitaxy. In addition, AES profiles identify the compositional integrity of the deposited films.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J. Cooper Jr., Mater. Sci. Forum 389–393, 15–22 (2002).

    Article  Google Scholar 

  2. W. E. Nelson, F. A. Halden and A. Rosengreen, J. Appl. Phys. 37 (1), 333–336 (1966).

    Article  CAS  Google Scholar 

  3. I. H. Khan, Mater. Res. Bull. 4, S285-S292 (1969).

    Google Scholar 

  4. M. Suemitsu, Y. Miyamoto, H. Handa and A. Konno, e-Journal of Surface Science and Nanotechnology 7, 311–313 (2009).

    Article  CAS  Google Scholar 

  5. K. Volz, S. Schreiber, J. W. Gerlach, W. Reiber, B. Rauschenbach, B. Stritzker, W. Assmann and W. Ensinger, Mater. Sci. Eng. A 289 (1–2), 255–264 (2000).

    Article  Google Scholar 

  6. H. Zheng, J. Zhu, Z. Fu, B. Lin and X. Li, J. Mater. Sci. Technol. 21 (4), 536–540 (2005).

    CAS  Google Scholar 

  7. T. Nishiguchi, M. Nakamura, K. Nishio, T. Isshiki and S. Nishino, Appl. Phys. Lett. 84 (16), 3082–3084 (2004).

    Article  CAS  Google Scholar 

  8. J. S. Schrader, J. Huguenin-Love, R. J. Soukup, N. J. Ianno, C. L. Exstrom, S. A. Darveau, R. N. Udey and V. L. Dalal, Sol. Energy Mater. Sol. Cells 90 (15), 2338–2345 (2006).

    Article  CAS  Google Scholar 

  9. R. J. Soukup, J. Huguenin-Love, N. J. Ianno and D. W. Thompson, J. Vac. Sci. Technol. A 26 (1), 17–22 (2008).

    Article  CAS  Google Scholar 

  10. R. J. Soukup, N. Ianno, J. Huguenin-Love, N. Lauer, T. Hofmann and Z. Hubicka, ECS Trans. 16 (7), 201–210 (2008).

    Article  CAS  Google Scholar 

  11. R. J. Soukup, N. J. Ianno and J. Huguenin-Love, Sol. Energy Mater. Sol. Cells 91 (15–16), 1383–1387 (2007).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. University of Nebraska-Lincoln, Lincoln, 68588-0511, NE, USA

    J. L. Huguenin-Love, R. J. Soukup, N. J. Ianno & N. T. Lauer

Authors
  1. J. L. Huguenin-Love
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. R. J. Soukup
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. N. J. Ianno
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. N. T. Lauer
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Huguenin-Love, J.L., Soukup, R.J., Ianno, N.J. et al. Epitaxial Deposition of 3C-SiC on Si Using Unconventional Sputtering of a Hollow Cathode. MRS Online Proceedings Library 1246, 717 (2009). https://doi.org/10.1557/PROC-1246-B07-17

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1557/PROC-1246-B07-17

Search

Navigation