Abstract
500 nm-thick aluminum-doped zinc oxide (ZnO:Al) thin film is usually used as a front transparent conductive oxide (TCO) contact on photovoltaic devices, and for this application is often deposited by a reactive radio-frequency (r.f.) magnetron sputtering system from a ceramic target. This work reports on the preparation and characterization of AZO thin films on Corning 1737 glass substrates grown by reactive r.f.-magnetron sputtering from a ZnO ceramic target with 2 wt% Al content. It was found that the growth parameters, such as chamber pressure, working power, and deposition temperature, have significant influences on the properties of AZO films. According to the experimental results: (1) Films were polycrystalline showing a strong preferred c-axis orientation. (2) With increasing working power, the resistivity decreased, and mobility and the carrier concentration increased. (3) Lower deposition temperature leads to a decrease in resistivity, with 2.5×10−4 Ω-cm representing the lowest resistivity reached.
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Acknowledgments
The authors would like to gratefully acknowledge partial financial support from the Green Technology Research Center of Chang Gung University.
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Kuo, SY., Lin, WT., Chang, LB. et al. Effects of Growth Parameters on Surface-morphological, Structural, Electrical and Optical Properties of AZO Films by RF Magnetron Sputtering. MRS Online Proceedings Library 1201, 532 (2009). https://doi.org/10.1557/PROC-1201-H05-32
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DOI: https://doi.org/10.1557/PROC-1201-H05-32