Abstract
Excitons in semiconductor alloys feel a random disorder potential leading to inhomogeneous line broadening and a lack of knowledge about the dominating recombination processes. Nevertheless, we demonstrate competing localization effects due to disorder (random potential fluctuations) and shallow point defects. We were able to spectrally separate donor-bound and quasi-free excitons within the whole wurtzite-type composition range of MgxZn1−xO (0 ≤ x ≤ 0.33) using spectrally resolved (x ≤ 0.06) and time-resolved photoluminescence (x ≥ 0.08). We found out that donor-bound excitons dominate photoluminescence spectra even for Mg-contents up to x = 0.18 and still appear for x = 0.33.
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Acknowledgments
The authors thank H. Hochmuth for growing the investigated samples and G. Ramm for target preparation. This work was supported by the Deutsche Forschungsgemeinschaft in the framework of Schwerpunktprogramm SPP1136 (Gr 1101/10-3), by the Graduate School BuildMoNa and by the European Social Fund (ESF).
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Dietrich, C.P., Müller, A., Stölzel, M. et al. Bound-exciton recombination in MgxZn1−xO thin films. MRS Online Proceedings Library 1201, 308 (2009). https://doi.org/10.1557/PROC-1201-H03-08
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DOI: https://doi.org/10.1557/PROC-1201-H03-08