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Linear Zone-Melt Recrystallized Si Films using Incoherent Light

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Abstract

Incoherent tungsten radiation has been used to recrystallize polysilicon films deposited on SiO2, grown on 75 mm diameter wafers. These films have been analyzed by a variety of techniques such as optical microscopy, Auger spectroscopy and TEM cross-sectioning. These films are large (> 50 mm dia.) single crystals, and contain fewer defects and impurities than similar films recrystallized in graphite strip heater ovens. They do, however, contain the subgrain boundaries found previously, even when high purity MBE polysilicon is used. In vertical TEM cross-sectioning, in addition to the subgrain boundaries, we have seen crystallized particles of 50–200 Å size in the Si film at both the upper and lower SiO2 boundaries. Although these particles could be related to formation of the subgrain boundaries, no definite correlation has been made.

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References

  1. See for example: “Laser and Electron-Beam Interactions with Solids” Editors B. R. Appleton and G. K. Celler (North-Holland, NY 1982).

  2. T. I. Kamins and B. P. Von Herzen, IEEE Electron Device Lett. EDL-2, 313 (1981).

    Article  CAS  Google Scholar 

  3. See: M. W. Geis, H. I. Smith, B-Y. Tsaur and J. C. C. Fan, Appl. Phys. Lett. 40, 158 (1982), and references therein.

    Article  CAS  Google Scholar 

  4. R. F. Pinizzotto, H. W. Lam, and B. L. Vaandrager, Appl. Phys. Lett. 40, 388 (1982).

    Article  CAS  Google Scholar 

  5. H. J. Leamy, R. A. Lemons, C. C. Chang, H. Baumgart, J. Cheng and E. Lane, Mat. Lett. 1, 33 (1982).

    Article  CAS  Google Scholar 

  6. A. Kamgar and E. Labate, Mat. Lett. Nov. 1982 (in press).

    Google Scholar 

  7. D. P. Vu, M. Haond and D. Bensahel, Jour. Appl. Phys. Dec. 1982 (in press).

    Google Scholar 

  8. G. K. Celler, M. D. Robinson and D. J. Lischner, Appl. Phys. Lett., Jan. 1983 (in press).

    Google Scholar 

  9. E. W. Maby, M. W. Geis, T. L. LeCoz, D. J. Silversmith, R. W. Mountain, and D. A. Antoniadis, IEEE Elec. Der. Lett. EDL-2, 241 (1981).

    Article  CAS  Google Scholar 

  10. J. C. C. Fan, B-Y. Tsaur, R. L. Chapman and M. W. Geis, Appl. Phys. Lett. 41, 186 (1982).

    Article  CAS  Google Scholar 

  11. D. G. Schimmel, Jour. Electrochem. Soc. 126, 479 (1979).

    Article  CAS  Google Scholar 

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Acknowledgements

We wish to thank S. M. Sze for his continued support and interest, E. Labate for his technical assistance, C. C. Chang for the Auger Spectroscopy, E. Povilonis for the preparation of the wafers and J. C. Bean for the MBE deposited polysilicon films.

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Authors and Affiliations

  1. Bell Laboratories, Murray Hill, New Jersey

    Avid Kamgar & R. Knoell

  2. North Carolina State University, Raleigh, NC

    G. A. Rozgonyi

Authors
  1. Avid Kamgar
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  2. G. A. Rozgonyi
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  3. R. Knoell
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Kamgar, A., Rozgonyi, G.A. & Knoell, R. Linear Zone-Melt Recrystallized Si Films using Incoherent Light. MRS Online Proceedings Library 13, 569–574 (1982). https://doi.org/10.1557/PROC-11-569

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  • DOI: https://doi.org/10.1557/PROC-11-569

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