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Single Carrier Initiated Low Excess Noise Mid-Wavelength Infrared Avalanche Photodiode using InAs-GaSb Strained Layer Superlattice

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Abstract

Mid-wavelength infrared (MWIR) avalanche photodiodes (APDs) were fabricated using Indium Arsenide- Gallium Antimonide (InAs-GaSb) based strain layer superlattice (SLS) structures. They were engineered specifically to have either electron or hole dominated ionization. The gain characteristics and the excess noise factors were measured for both devices. The electron dominated p+-n−-n APD with a cut-off wavelength of 4.13 μm at 77 K had a maximum multiplication gain of 1800 measured at -20 V while that of the hole dominated n+-p--p structure with a cut-off wavelength of 4.98 μm at 77 K was 21.1 at -5 V at 77 K. Excess noise factors were measured between 1-1.2 up to a gain of 800 and between 1-1.18 up to a gain of 7 for electron and hole dominated APDs respectively.

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Authors and Affiliations

  1. Lab for Photonics and Magnetics (ECE), University of Illinois at Chicago, Chicago, IL, 60607, USA

    Koushik Banerjee, Shubhrangshu Mallick & Siddhartha Ghosh

  2. Center for High Technology Materials (ECE), University of New Mexico, Albuquerque, NM, 87106, USA

    Elena Plis, Jean Baptiste Rodriguez & Sanjay Krishna

  3. Microphysics Laboratory (Physics), University of Illinois at Chicago, Chicago, IL, 60607, USA

    Christoph Grein

Authors
  1. Koushik Banerjee
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  2. Shubhrangshu Mallick
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  3. Siddhartha Ghosh
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  4. Elena Plis
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  5. Jean Baptiste Rodriguez
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  6. Sanjay Krishna
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  7. Christoph Grein
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Banerjee, K., Mallick, S., Ghosh, S. et al. Single Carrier Initiated Low Excess Noise Mid-Wavelength Infrared Avalanche Photodiode using InAs-GaSb Strained Layer Superlattice. MRS Online Proceedings Library 1076, 10760202 (2008). https://doi.org/10.1557/PROC-1076-K02-02

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  • DOI: https://doi.org/10.1557/PROC-1076-K02-02

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