Abstract
Buried TiSi2 layers, about 600Å thick and 900Å below the surface, were formed in < 111> silicon by ion implantation. The implantation was done with either 120 or 170 keV Ti+ to doses ranging from 5 x 1016 to 2 x 1017 ions/cm2, and at temperatures of between ambient and 650° C. Annealing was done at 600° C, 700°C and 1000°C. Continuous buried layers were achieved only with samples implanted with doses equal or greater than 1017 ions/cm2 and at temperatures above 450°C. Below this dose TiSi2, was present only as discrete precipitates. For room temperature implants, the TiSi2, layer is formed on the surface. The damage present consists of dispersed TiSi6 precipitates and microtwins.
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Madakson, P., Clark, G.J., Legoues, F.K. et al. Formation of Buried Tisi2 Layers in Single Crystal Silicon by Ion Implantion. MRS Online Proceedings Library 107, 281–258 (1987). https://doi.org/10.1557/PROC-107-281
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DOI: https://doi.org/10.1557/PROC-107-281