Growth and Characterization of InSb films on Si (001)

Abstract

In this paper we describe the growth of InSb on Si (001) using molecular-beam epitaxy and discuss the structural and electrical properties of the resulting InSb films. The samples were characterized in terms of background electron concentration, mobility, deep level traps, Hall sensitivity, and x-ray rocking curve. We have investigated samples grown at temperatures between 300ºC and 420ºC. To prevent the formation of the defects we introduced in some samples GaSb/AlSb superlattice buffer layer. The best structural quality has been achieved at a growth temperature of 420ºC using GaSb/AlSb superlattice buffer layer, resulting in our best electron mobility of 26500 cm²/Vs for a 2µm film at room temperature. This sample has the narrowest x-ray rocking curve width. Deep level noise spectra indicate the existence of the deep levels in all samples in a temperature range of 80 to 300 K. The sample with the best crystal quality and highest mobility, however, has the lowest trap density. The deep levels have a temperature dependent behavior.