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Optimized O/Si Composition Ratio for Enhancing Si Nanocrystal Based Luminescence in Si-rich SiOx Grown by PECVD with Argon Diluted SiH4

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Abstract

Effect of O/Si composition ratio on near-infrared photoluminescence (PL) of PECVD grown Si-rich SiOx after 1100°C annealing are analyzed by Rutherford backscattering (RBS) and Fourier-transformed infrared spectroscopy (FTIR) to show nonlinear relationship with strongest PL at 760 nm at optimized O/Si = 1.24, total Si concentration of 44.6 atom.%, and N2O/SiH4 fluence ratio of 4.5. A nearly Gaussian function of the normalized PL intensity vs. O/Si composition ratio has been observed due to the significant variation on the Si nanocrystals size with the density of the excessive Si atoms.

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Authors and Affiliations

  1. Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, No. 1, Roosevelt Rd. Sec. 4, 10617, Taipei, Taiwan

    Chung-Hsiang Chang & Gong-Ru Lin

  2. Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Section 2, Kuang Fu Rd., 300, Hsinchu, Taiwan

    Chin-Hua Hsieh & Li-Jen Chou

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  1. Chung-Hsiang Chang
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  2. Chin-Hua Hsieh
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  3. Li-Jen Chou
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  4. Gong-Ru Lin
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Chang, CH., Hsieh, CH., Chou, LJ. et al. Optimized O/Si Composition Ratio for Enhancing Si Nanocrystal Based Luminescence in Si-rich SiOx Grown by PECVD with Argon Diluted SiH4. MRS Online Proceedings Library 1066, 10661811 (2007). https://doi.org/10.1557/PROC-1066-A18-11

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