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Lattice Relaxation of the DX Centers in Ga-x Alx As and of the Pressure-Induced Deep Donors in GaAs

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Abstract

Deep Level Transient Spectroscopies (DLTS) and capacitance transient techniques have been applied to GaAs:Si and to Ga{n1-x}AlxAs:Te (x=0.35) under quasi-hydrostatic pressure using a diamond anvil cell. By substituting the experimental pressure coefficients of the defect energies into a model proposed by Li and Yu (Solid State Commun. 61, 13 (1987)) we concluded that both the DX center in the GaAiAs alloy and the pressure-induced deep donor (PIDD) in GaAs have large lattice relaxations associated with them.

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Acknowledgments

This work is supported by the Director, Office of Basic Energy Sciences, Material Science Division ofthe U.S. Department of Fnergy under Contract DEACO3-76SFO0098.

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Authors and Affiliations

  1. Department of Physic, University of California, Berkeley, CA o94720, USA

    M.F. Li, W. Shan & P.Y. Yu

  2. Lawrence Berkeley Laboratory, Berkeley, CA, 94720, USA

    M.F. Li, W. Shan, P.Y. Yu, W.L. Hansen & E.R. Weber

  3. Department of Material Sciences and Mineral Engineering, University of California, Berkeley, CA o94720, USA

    E.R. Weber

  4. Max-Planck-Institut fur Festkorperforschung, D-7000, Stuttgart 80, Germany

    E. Bauser

Authors
  1. M.F. Li
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  2. W. Shan
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  3. P.Y. Yu
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  4. W.L. Hansen
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  5. E.R. Weber
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  6. E. Bauser
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Li, M., Shan, W., Yu, P. et al. Lattice Relaxation of the DX Centers in Ga-x Alx As and of the Pressure-Induced Deep Donors in GaAs. MRS Online Proceedings Library 104, 573–578 (1987). https://doi.org/10.1557/PROC-104-573

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  • DOI: https://doi.org/10.1557/PROC-104-573

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