Abstract
The diffusivity of Si and P in GaAs encapsulated with heavily-doped polysilicon (poly-Si) is correlated to the flux of Ga and As diffusing from the substrate into the encapsulant. A model based on the diffusion of vacancies into the GaAs is proposed and used to simulate the data.
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Acknowledgements
This work was supported in part by a grant from IBM (Bob Joseph, East Fishkill) and a fellowship from Bell-Northern Research. We are grateful to Larry Doolittle for the use of the RBS analysis program, RUMP.
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Kavanagh, K.L., Magee, C.W. & Sheets, J. Vacancy Diffusion at Polysilicon Encapsulated GaAs Surfaces. MRS Online Proceedings Library 104, 463–466 (1987). https://doi.org/10.1557/PROC-104-463
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DOI: https://doi.org/10.1557/PROC-104-463