Abstract
The methane effects on nucleation and growth of diamond during bias enhanced nucleation treatment have been studied on 3C-SiC (100) surfaces. At low methane concentration of 1%, no diamond nucleation was observed, whether at 3 %, nucleation density values as high as 4×1010/cm2 were reached. A further increase of the methane concentration up to 5% induces a significant enhancement of the diamond nucleation density that was observed only slightly higher at 7×1010/cm2. Moreover, the Field Emission Gun Scanning Electron Microscopy (FEG-SEM) pictures well emphasized that the methane content affects both the nucleation and growth mechanisms.
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Arnault, JC., Saada, S., Intiso, L. et al. The Effects of Methane Concentration on Diamond Nucleation and Growth During Bias Enhanced Nucleation on 3C-SiC(100) Surfaces. MRS Online Proceedings Library 956, 803 (2006). https://doi.org/10.1557/PROC-0956-J08-03
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DOI: https://doi.org/10.1557/PROC-0956-J08-03